Structural properties of ferromagnetic GaMnAs layers
نویسندگان
چکیده
منابع مشابه
Ferromagnetic Resonance Investigation of GaMnAs Nanometric Layers
This thesis is dedicated to the study of the magnetic properties of GaMnAs nanometric layers by the ferromagnetic resonance (FMR) technique. Three series of samples have been studied to investigate independently the influence of the strain, the hole concentration and the Mn concentration on the magnetic properties of GaMnAs. In the first series, the Ga1−xMnxAs samples with x=0.07, grown on GaAs...
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Thin layers of GaMnAs ferromagnetic semiconductor grown by molecular beam epitaxy on GaAs(001) substrates were studied. To improve their magnetic properties the post-growth annealing procedures were applied, using the surface passivation layers of amorphous arsenic. This post-growth treatment effectively increases the ferromagnetic-to-paramagnetic phase transition temperature in GaMnAs, and pro...
متن کاملLarge tunneling magnetoresistance in GaMnAs/AlAs/GaMnAs ferromagnetic semiconductor tunnel junctions
We have observed very large tunneling magnetoresistance (TMR) in epitaxially grown Ga1−xMnxAs/AlAs/Ga1−xMnxAs ferromagnetic semiconductor tunnel junctions. Large TMR ratios more than 70% were obtained in junctions with a very thin (5 1.6 nm) AlAs tunnel barrier when the magnetic field was applied along the [100] axis in the film plane. The TMR was found to rapidly decrease with increasing the b...
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in ferromagnetic GaMnAs J. Wang, I. Cotoros, D. S. Chemla, X. Liu, J. K. Furdyna, J. Chovan, and I. E. Perakis Department of Physics and Astronomy and Ames Laboratory-USDOE, Iowa State University, Ames, Iowa 50011, USA Department of Physics and Materials Sciences Division, E.O. Lawrence Berkeley National Laboratory, University of California at Berkeley, Berkeley, California 94720, USA Departmen...
متن کاملLarge magnetoresistance in a ferromagnetic GaMnAs/GaAs Zener diode
–We investigate spin-dependent interband tunnelling in a ferromagnetic (Ga,Mn)As/ GaAs Zener diode. The ferromagnetic pn-junction is fabricated with a Mn-doped p-type GaAs layer on top of a nonmagnetic n-type GaAs substrate. When both sides of the junction are heavily doped, a large magnetic-field–dependent tunnelling effect can be seen at low temperatures in the measured current-voltage (I-V )...
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ژورنال
عنوان ژورنال: Acta Crystallographica Section A Foundations of Crystallography
سال: 2005
ISSN: 0108-7673
DOI: 10.1107/s0108767305082498